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深圳市邁瑞施電子技術(shù)有限公司
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深圳市邁瑞施電子技術(shù)有限公司
| 參 考 價 | 面議 |
產(chǎn)品型號SKKT250/16E
品 牌
廠商性質(zhì)代理商
所 在 地深圳市
聯(lián)系方式：曾先生查看聯(lián)系方式
更新時間：2016-07-04 18:06:33瀏覽次數(shù)：242次
聯(lián)系我時，請告知來自 環(huán)保在線SKKT250/16E品牌：西門康又名賽米控Semikron；
產(chǎn)地：*；
PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發(fā)射極控制二極管
PrimePACK™2 module with Trench/Fieldstop IGBT3, enlarged Emitter Controlled 4 diode
初步數(shù)據(jù) / Prelim
SKKT250/16E品牌：西門康又名賽米控Semikron；
SKKT250/16E產(chǎn)地：*；
PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發(fā)射極控制二極管
PrimePACK™2 module with Trench/Fieldstop IGBT3, enlarged Emitter Controlled 4 diode
初步數(shù)據(jù) / Preliminary Data
深圳市邁瑞施電子技術(shù)有限公司：一家專業(yè)做進(jìn)口 * 現(xiàn)貨 批發(fā)零售的企業(yè)，
更詳細(xì)的內(nèi)容 敬請登錄公司了解。www.mrs2003。。ｃｏｍ
VCES = 1200V
IC nom = 273A / ICRM = 500A
典型應(yīng)用 Typical Applications
• 斬波應(yīng)用 • Chopper Applications
電氣特性 Electrical Features
• 提高工作結(jié)溫 Tvj op • Extended Operation Temperature Tvj op
• 高直流電壓穩(wěn)定性 • High DC Stability
• 高短路能力，自限制短路電流 • High Short Circuit Capability, Self Limiting Short
• VCEsat 帶正溫度系數(shù) Circuit Current
• VCEsat with positive Temperature Coefficient
• 低 VCEsat • Low VCEsat
機(jī)械特性 Mechanical Features
• 4 kV 交流 1分鐘 絕緣 • 4 kV AC 1min Insulation
• 封裝的 CTI > 400 • Package with CTI > 400
• 高爬電距離和電氣間隙 • High Creepage and Clearance Distances
• 高功率循環(huán)和溫度循環(huán)能力 • High Power and Thermal Cycling Capability
• 高功率密度 • High Power Density
• 低熱阻襯底 • Substrate for Low Thermal Resistance
SEMiX603GAL066HDS SKD62/14 SKKD380/08 SKKH570/18E SKM150GAL12V
SEMiX603GB066HDS SKD62/18 SKKD380/16 SKKQ1200/18E SKM150GAR12T4
SEMiX604GAL12E4S SKD82/04 SKKD380/18 SKKQ1500/14E SKM150GB123D
SEMiX604GAR12E4S SKD82/08 SKKD380/20H4 SKKQ1500/18E SKM150GB12T4
SEMiX604GB126HDS SKD82/12 SKKD380/22H4 SKKQ3000/14E SKM150GB12T4G
SEMiX604GB176HDS SKD82/18 SKKD701/18 SKKQ560/18E SKM150GB173D
SEMiX653GAL176HDS SKDH100/08 SKKD701/22H4 SKKQ800/14E SKM150GM12T4G
SEMiX653GAR176HDS SKDH100/12 SKKD75F12 SKKQ800/18E SKM180A020
SEMiX653GB176HDS SKDH100/14 SKKE1200/18H4 SKKT106/08E SKM195GAL123D
SEMiX653GD176HDc SKDH115/12 SKKE1200/22H4 SKKT106/12E SKM195GAL126D
SEMiX703GAL126HDS SKDH115/16 SKKE120F17 SKKT106/14E SKM195GB066D
SEMiX703GAR126HDS SKDH116/16-L75 SKKE162/08 SKKT106/16E SKM195GB126D
SEMiX703GB126HDS SKDT100/08 SKKE162/12 SKKT106/18E SKM200GAL123D
SEMiX703GD126HDc SKDT100/12 SKKE162/14 SKKT106B12E SKM200GAL125D
SEMiX854GB176HDS SKDT100/14 SKKE162/16 SKKT106B16E SKM200GAL126D
SEMiX904GB126HDS SKDT100/16 SKKE162/18 SKKT106B18E SKM200GAL12E4
SK100B16 SKDT115/12 SKKE162/22H4TS SKKT107/16E SKM200GAL12T4
SK100GB12T4T SKDT145/12 SKKE301F12 SKKT122/12E SKM200GAL173D
SK100GD066T SKDT60/04 SKKE310F12 SKKT122/16E SKM200GAL176D
SK100GD126T SKDT60/08 SKKE330F17 SKKT122/18E SKM200GAR123D
SK100GD12T4T SKDT60/12 SKKE380/12 SKKT132/08E SKM200GAR125D
SK100GH12T4T SKDT60/14 SKKE380/16 SKKT132/12E SKM200GAR173D
SK100KQ12 SKET330/12E SKKE600/12 SKKT132/14E SKM200GB063D
SK100KQ16 SKET330/16E SKKE600/16 SKKT132/16E SKM200GB123D
SK120KQ12 SKET740/18GH4 SKKH107/16E SKKT162/18E SKM200GB173D1
SK200DHL066 SKET800/14GH4 SKKH132/08E SKKT162/22EH4 SKM200GBD123D
SK300MB075 SKET800/18GH4 SKKH132/12E SKKT172/14E SKM200GBD126D
SK30DGDL066ET SKiM220GD176DH4 SKKH132/16E SKKT172/16E SKM200GM12T4
SKD100/04 SKiM270GD176D SKKH132/18E SKKT172/18E SKM300GA123D
SKD100/08 SKiM300GD126D SKKH132/22EH4 SKKT250/08E SKM300GA12E4
SKD100/12 SKiM300GD126DL SKKH162/08E SKKT250/12E SKM300GA12T4
SKD100/16 SKiM400GD126DM SKKH162/12E SKM300GA12V
SKD110/08 SKiM450GD126D SKKH162/14E SKKT250/18E SKM300GAL063D
SKD110/16 SKiM601GD126DLM SKKH162/18E SKKT273/16E SKM300GAL12E4
SKD110/18 SKiM601GD126DM SKKH162/20EH4 SKKT273/18E SKM300GAL12T4
SKD115/12 SKKD100/08 SKKH162/22EH4 SKKT280/20EH4 SKM300GAR063D
SKD115/16 SKKD100/12 SKKH172/16E SKKT280/22EH4 SKM300GAR123D
SKD145/16 SKKD100/14 SKKH250/08E SKKT323/12E SKM300GB063D
SKD160/12 SKKD100/18 SKKH250/16E SKKT330/08E SKM300GB123D
SKD160/16 SKKD101/16 SKKH250/18E SKKT330/12E SKM300GB125D
SKD210/12 SKKD105F12 SKKH280/20EH4 SKKT430/16E SKM300GB12T4
SKD210/16 SKKD115F12 SKKH280/22EH4 SKKT460/16E SKM300GB12V
SKD210/18 SKKD115F14 SKKH323/12E SKKT460/22EH4 SKM300GBD12T4
SKD31/02 SKKD150F12 SKKH323/16E SKKT570/12E SKM300GM12T4
SKD31/04 SKKD162/08 SKKH330/08E SKKT570/16E SKM400GA123D
SKD31/12 SKKD162/14 SKKH330/16E SKM100GAL123D SKM400GA12T4
SKD31/14 SKKD162/16 SKKH330/18E SKM100GAL12T4 SKM400GA12V
SKD31/16 SKKD162/18 SKKH460/16E SKM100GAR123D SKM400GA173D
SKD60/08 SKKD162/20H4 SKKH460/22EH4 SKM100GB063D SKM400GAL125D
SKD60/12 SKKD162/22H4 SKKH570/12E SKM100GB123D SKM400GAL126D
SKD60/16 SKKD170F12 SKM500GA123D SKM100GB125DNN SKM400GAL12E4
SKD62/04 SKKD205F06 SKM500GA123DS SKM100GB12T4 SKM400GAL12T4
SKD62/08 SKKD212/12 SKM50GAL123D SKM100GB12T4G SKM400GAL12V
SKM600GA125D SKKD212/16 SKM50GAL12T4 SKM100GB12V SKM400GAL176D04119
SKM600GA126D03141 SKKD260/08 SKM50GB063D SKM100GB173D SKM400GAL176DL3
SKM600GA12E4 SKKD260/12 SKM50GB123D SKM100GB176D SKM400GAR125D
SKM600GA12T4 SKKD260/16 SKM50GB12T4 SKM145GAL123D SKM400GAR12E4
SKM600GA12V SKM75GB063D SKM400GB12V SKM145GAL176D SKM400GAR12T4
SKM600GA176D SKM75GB123D SKM400GB176D SKM145GAR123D SKM400GB066D
SKM600GAL126D SKM75GB12T4 SKM400GB176DL3 SKM145GB066D SKM400GB123D
SKM600GB066D SKM75GB12V SKM400GM12T4 SKM145GB123D SKM400GB125D
SKM600GB126D SKM75GB173D SKM40GAH123DTS95036 SKM145GB176D SKM400GB126D
SKM75GAL063D SKM75GB176D SKM40GD123D SKM150GAL123D SKM400GB12E4
SKM75GAL123D SKM75GD123D SKM40GD124DTS97066 SKM400GB12T4
SKM75GAR063D SKM75GDL123D SKM800GA125D03071 SKM800GA176D
SKM75GAR123D SKM800GA126D
IGBT, 斬波器 / IGBT-Chopper
zui大額定值 / Maximum Rated Values
集電極－發(fā)射極電壓 | Tvj = 25°C | VCES |
| 1200 |
| V |
Collector-emitter voltage | ||||||
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連續(xù)集電極直流電流 | TC = 100°C, Tvj max = 175°C | IC nom |
| 800 |
| A |
Continuous DC collector current | ||||||
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集電極重復(fù)峰值電流 | tP = 1 ms | ICRM |
| 1800 |
| A |
Repetitive peak collector current | ||||||
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總功率損耗 | TC = 25°C, Tvj max = 175°C | Ptot |
| 5,10 |
| kW |
Total power dissipation | ||||||
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柵極－發(fā)射極峰值電壓 |
| VGES |
| +/-20 |
| V |
Gate-emitter peak voltage | ||||||
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特征值 / Characteristic Values |
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| min. | typ. | max. |
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集電極－發(fā)射極飽和電壓 | IC = 900 A, VGE = 15 V |
| Tvj = 25°C |
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| 1,70 | 2,05 | V |
Collector-emitter saturation voltage | IC = 900 A, VGE = 15 V |
| Tvj = 125°C | VCE sat |
| 2,00 |
| V |
| IC = 900 A, VGE = 15 V |
| Tvj = 150°C |
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| 2,10 |
| V |
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柵極閾值電壓 | IC = 33,0 mA, VCE = VGE, Tvj = 25°C |
| VGEth | 5,0 | 5,8 | 6,5 | V | |
Gate threshold voltage |
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柵極電荷 | VGE = -15 V ... +15 V |
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| 6,40 |
| µC |
Gate charge |
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內(nèi)部柵極電阻 | Tvj = 25°C |
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| 1,2 |
| W |
Internal gate resistor |
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輸入電容 | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V |
| Cies |
| 54,0 |
| nF | |
Input capacitance |
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反向傳輸電容 | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V |
| Cres |
| 2,80 |
| nF | |
Reverse transfer capacitance |
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集電極-發(fā)射極截止電流 | VCE = 1200 V, VGE = 0 V, Tvj = 25°C |
| ICES |
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| 5,0 | mA | |
Collector-emitter cut-off current |
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柵極-發(fā)射極漏電流 | VCE = 0 V, VGE = 20 V, Tvj = 25°C |
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| IGES |
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| 400 | nA |
Gate-emitter leakage current |
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開通延遲時間(電感負(fù)載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | td on |
| 0,20 |
| µs |
Turn-on delay time, inductive load | VGE = ±15 V |
| Tvj = 125°C | 0,22 | µs | |||
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| RGon = 1,6 W |
| Tvj = 150°C |
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| 0,22 |
| µs |
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上升時間(電感負(fù)載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | tr |
| 0,14 |
| µs |
Rise time, inductive load | VGE = ±15 V |
| Tvj = 125°C |
| 0,15 |
| µs | |
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| RGon = 1,6 W |
| Tvj = 150°C |
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| 0,15 |
| µs |
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關(guān)斷延遲時間(電感負(fù)載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | td off |
| 0,70 |
| µs |
Turn-off delay time, inductive load | VGE = ±15 V |
| Tvj = 125°C | 0,80 | µs | |||
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| RGoff = 1,6 W |
| Tvj = 150°C |
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| 0,85 |
| µs |
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下降時間(電感負(fù)載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | tf |
| 0,20 |
| µs |
Fall time, inductive load | VGE = ±15 V |
| Tvj = 125°C |
| 0,40 |
| µs | |
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| RGoff = 1,6 W |
| Tvj = 150°C |
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| 0,45 |
| µs |
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開通損耗能量 (每脈沖) | IC = 900 A, VCE = 600 V, LS = 45 nH | Tvj = 25°C |
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| 50,0 |
| mJ | |
Turn-on energy loss per pulse | VGE = ±15 V, di/dt = 4800 A/µs (Tvj = 150°C) Tvj = 125°C | Eon | 70,0 | mJ | ||||
| RGon = 1,6 W |
| Tvj = 150°C |
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| 80,0 |
| mJ |
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關(guān)斷損耗能量 (每脈沖） | IC = 900 A, VCE = 600 V, LS = 45 nH | Tvj = 25°C |
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| 150 |
| mJ | |
Turn-off energy loss per pulse | VGE = ±15 V, du/dt = 2700 V/µs (Tvj = 150°C)Tvj = 125°C | Eoff | 200 | mJ | ||||
| RGoff = 1,6 W |
| Tvj = 150°C |
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| 205 |
| mJ |
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短路數(shù)據(jù) | VGE £ 15 V, VCC = 800 V |
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SC data | VCEmax = VCES -LsCE ·di/dt | tP £ 10 µs, Tvj = 150°C | 3600 | A | ||||
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結(jié)－外殼熱阻 | 每個 IGBT / per IGBT |
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| RthJC |
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| 29,5 | K/kW |
Thermal resistance, junction to case |
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外殼－散熱器熱阻 | 每個 IGBT / per IGBT |
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| RthCH |
| 16,0 |
| K/kW |
Thermal resistance, case to heatsink | lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K) |
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在開關(guān)狀態(tài)下溫度 |
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| Tvj op | -40 |
| 150 | °C |
Diode-斬波器 / Diode-Chopper
zui大額定值 / Maximum Rated Values
反向重復(fù)峰值電壓 | Tvj = 25°C | VRRM |
| 1200 |
| V |
Repetitive peak reverse voltage | ||||||
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連續(xù)正向直流電流 |
| IF |
| 900 |
| A |
Continuous DC forward current | ||||||
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正向重復(fù)峰值電流 | tP = 1 ms | IFRM |
| 1800 |
| A |
Repetitive peak forward current | ||||||
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I2t-值 | VR = 0 V, tP = 10 ms, Tvj = 125°C | I²t |
| 150 |
| kA²s |
I²t - value | VR = 0 V, tP = 10 ms, Tvj = 150°C | 145 | kA²s |
特征值 / Characteristic Values |
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| min. | typ. | max. |
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正向電壓 | IF = 900 A, VGE = 0 V | Tvj = 25°C |
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| 1,65 | 2,15 | V |
Forward voltage | IF = 900 A, VGE = 0 V | Tvj = 125°C | VF |
| 1,55 |
| V |
| IF = 900 A, VGE = 0 V | Tvj = 150°C |
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| 1,50 |
| V |
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反向恢復(fù)峰值電流 | IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C) | Tvj = 25°C |
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| 560 |
| A |
Peak reverse recovery current | VR = 600 V | Tvj = 125°C | IRM |
| 770 |
| A |
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| Tvj = 150°C |
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| 820 |
| A |
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恢復(fù)電荷 | IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C) | Tvj = 25°C |
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| 110 |
| µC |
Recovered charge | VR = 600 V | Tvj = 125°C | Qr |
| 200 |
| µC |
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| Tvj = 150°C |
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| 225 |
| µC |
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反向恢復(fù)損耗（每脈沖） | IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C) | Tvj = 25°C |
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| 50,0 |
| mJ |
Reverse recovery energy | VR = 600 V | Tvj = 125°C | Erec |
| 90,0 |
| mJ |
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| 105 |
| mJ |
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結(jié)－外殼熱阻 | 每個二極管 / per diode |
| RthJC |
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| 37,0 | K/kW |
Thermal resistance, junction to case |
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外殼－散熱器熱阻 | 每個二極管 / per diode |
| RthCH |
| 20,0 |
| K/kW |
Thermal resistance, case to heatsink | lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K) |
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在開關(guān)狀態(tài)下溫度 |
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| Tvj op | -40 |
| 150 | °C |
Temperature under switching conditions |
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反向二極管 / Diode, Reverse
zui大額定值 / Maximum Rated Values
反向重復(fù)峰值電壓 | Tvj = 25°C | VRRM |
| 1200 |
| V |
Repetitive peak reverse voltage | ||||||
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連續(xù)正向直流電流 |
| IF |
| 120 |
| A |
Continuous DC forward current | ||||||
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正向重復(fù)峰值電流 | tP = 1 ms | IFRM |
| 240 |
| A |
Repetitive peak forward current | ||||||
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|
I2t-值 | VR = 0 V, tP = 10 ms, Tvj = 125°C | I²t |
| 0,17 | kA²s | |
I²t - value | ||||||
賽米控可控硅、晶閘管、IGBT模塊，西門康可控硅、晶閘管、IGBT模塊。
中文資料，技術(shù)參數(shù)， PDF datasheet,圖片。
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