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深圳市邁瑞施電子技術(shù)有限公司
深圳市邁瑞施電子技術(shù)有限公司
| 參 考 價 | 面議 |
產(chǎn)品型號FF800R12KF4
品 牌
廠商性質(zhì)代理商
所 在 地深圳市
聯(lián)系方式：曾先生查看聯(lián)系方式
更新時間：2016-07-02 14:06:29瀏覽次數(shù)：145次
聯(lián)系我時，請告知來自 環(huán)保在線FF800R12KF4品牌：英飛凌（Infineon）、優(yōu)派克（eupec）；
產(chǎn)地：源產(chǎn)于*；
技術(shù)信息 / Technical Information
IGBT-模塊
IGBT-modules
PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發(fā)射極控制二極管
FF800R12KF4品牌：英飛凌(Infineon)、優(yōu)派克（eupec）；
FF800R12KF4產(chǎn)地：源產(chǎn)于*；
技術(shù)信息 / Technical Information
IGBT-模塊
IGBT-modules
PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發(fā)射極控制二極管
PrimePACK™2 module with Trench/Fieldstop IGBT3, enlarged Emitter Controlled 4 diode
初步數(shù)據(jù) / Preliminary Data
深圳市邁瑞施電子技術(shù)有限公司：一家專業(yè)做進口 * 現(xiàn)貨 批發(fā)零售的企業(yè)，
更詳細的內(nèi)容 敬請登錄公司了解。www.mrs2003。。ｃｏｍ
VCES = 1200V
IC nom = 800A / ICRM = 800A
典型應(yīng)用 Typical Applications
• 斬波應(yīng)用 • Chopper Applications
電氣特性 Electrical Features
• 提高工作結(jié)溫 Tvj op • Extended Operation Temperature Tvj op
• 高直流電壓穩(wěn)定性 • High DC Stability
• 高短路能力，自限制短路電流 • High Short Circuit Capability, Self Limiting Short
• VCEsat 帶正溫度系數(shù) Circuit Current
• VCEsat with positive Temperature Coefficient
• 低 VCEsat • Low VCEsat
機械特性 Mechanical Features
• 4 kV 交流 1分鐘 絕緣 • 4 kV AC 1min Insulation
• 封裝的 CTI > 400 • Package with CTI > 400
• 高爬電距離和電氣間隙 • High Creepage and Clearance Distances
• 高功率循環(huán)和溫度循環(huán)能力 • High Power and Thermal Cycling Capability
• 高功率密度 • High Power Density
• 低熱阻襯底 • Substrate for Low Thermal Resistance
IGBT, 斬波器 / IGBT-Chopper
zui大額定值 / Maximum Rated Values
集電極－發(fā)射極電壓 | Tvj = 25°C | VCES |
| 1200 |
| V |
Collector-emitter voltage | ||||||
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連續(xù)集電極直流電流 | TC = 100°C, Tvj max = 175°C | IC nom |
| 800 |
| A |
Continuous DC collector current | ||||||
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集電極重復(fù)峰值電流 | tP = 1 ms | ICRM |
| 1800 |
| A |
Repetitive peak collector current | ||||||
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總功率損耗 | TC = 25°C, Tvj max = 175°C | Ptot |
| 5,10 |
| kW |
Total power dissipation | ||||||
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柵極－發(fā)射極峰值電壓 |
| VGES |
| +/-20 |
| V |
Gate-emitter peak voltage | ||||||
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特征值 / Characteristic Values |
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| min. | typ. | max. |
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集電極－發(fā)射極飽和電壓 | IC = 900 A, VGE = 15 V |
| Tvj = 25°C |
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| 1,70 | 2,05 | V |
Collector-emitter saturation voltage | IC = 900 A, VGE = 15 V |
| Tvj = 125°C | VCE sat |
| 2,00 |
| V |
| IC = 900 A, VGE = 15 V |
| Tvj = 150°C |
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| 2,10 |
| V |
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柵極閾值電壓 | IC = 33,0 mA, VCE = VGE, Tvj = 25°C |
| VGEth | 5,0 | 5,8 | 6,5 | V | |
Gate threshold voltage |
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柵極電荷 | VGE = -15 V ... +15 V |
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| 6,40 |
| µC |
Gate charge |
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內(nèi)部柵極電阻 | Tvj = 25°C |
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| RGint |
| 1,2 |
| W |
Internal gate resistor |
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輸入電容 | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V |
| Cies |
| 54,0 |
| nF | |
Input capacitance |
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反向傳輸電容 | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V |
| Cres |
| 2,80 |
| nF | |
Reverse transfer capacitance |
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集電極-發(fā)射極截止電流 | VCE = 1200 V, VGE = 0 V, Tvj = 25°C |
| ICES |
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| 5,0 | mA | |
Collector-emitter cut-off current |
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柵極-發(fā)射極漏電流 | VCE = 0 V, VGE = 20 V, Tvj = 25°C |
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| IGES |
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| 400 | nA |
Gate-emitter leakage current |
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開通延遲時間(電感負載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | td on |
| 0,20 |
| µs |
Turn-on delay time, inductive load | VGE = ±15 V |
| Tvj = 125°C | 0,22 | µs | |||
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| RGon = 1,6 W |
| Tvj = 150°C |
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| 0,22 |
| µs |
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上升時間(電感負載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | tr |
| 0,14 |
| µs |
Rise time, inductive load | VGE = ±15 V |
| Tvj = 125°C |
| 0,15 |
| µs | |
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| RGon = 1,6 W |
| Tvj = 150°C |
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| 0,15 |
| µs |
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關(guān)斷延遲時間(電感負載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | td off |
| 0,70 |
| µs |
Turn-off delay time, inductive load | VGE = ±15 V |
| Tvj = 125°C | 0,80 | µs | |||
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| RGoff = 1,6 W |
| Tvj = 150°C |
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| 0,85 |
| µs |
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下降時間(電感負載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | tf |
| 0,20 |
| µs |
Fall time, inductive load | VGE = ±15 V |
| Tvj = 125°C |
| 0,40 |
| µs | |
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| RGoff = 1,6 W |
| Tvj = 150°C |
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| 0,45 |
| µs |
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開通損耗能量 (每脈沖) | IC = 900 A, VCE = 600 V, LS = 45 nH | Tvj = 25°C |
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| 50,0 |
| mJ | |
Turn-on energy loss per pulse | VGE = ±15 V, di/dt = 4800 A/µs (Tvj = 150°C) Tvj = 125°C | Eon | 70,0 | mJ | ||||
| RGon = 1,6 W |
| Tvj = 150°C |
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| 80,0 |
| mJ |
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關(guān)斷損耗能量 (每脈沖） | IC = 900 A, VCE = 600 V, LS = 45 nH | Tvj = 25°C |
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| 150 |
| mJ | |
Turn-off energy loss per pulse | VGE = ±15 V, du/dt = 2700 V/µs (Tvj = 150°C)Tvj = 125°C | Eoff | 200 | mJ | ||||
| RGoff = 1,6 W |
| Tvj = 150°C |
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| 205 |
| mJ |
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短路數(shù)據(jù) | VGE £ 15 V, VCC = 800 V |
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SC data | VCEmax = VCES -LsCE ·di/dt | tP £ 10 µs, Tvj = 150°C | 3600 | A | ||||
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結(jié)－外殼熱阻 | 每個 IGBT / per IGBT |
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| RthJC |
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| 29,5 | K/kW |
Thermal resistance, junction to case |
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外殼－散熱器熱阻 | 每個 IGBT / per IGBT |
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| RthCH |
| 16,0 |
| K/kW |
Thermal resistance, case to heatsink | lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K) |
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在開關(guān)狀態(tài)下溫度 |
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| Tvj op | -40 |
| 150 | °C |
Diode-斬波器 / Diode-Chopper
zui大額定值 / Maximum Rated Values
反向重復(fù)峰值電壓 | Tvj = 25°C | VRRM |
| 1200 |
| V |
Repetitive peak reverse voltage | ||||||
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連續(xù)正向直流電流 |
| IF |
| 900 |
| A |
Continuous DC forward current | ||||||
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正向重復(fù)峰值電流 | tP = 1 ms | IFRM |
| 1800 |
| A |
Repetitive peak forward current | ||||||
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I2t-值 | VR = 0 V, tP = 10 ms, Tvj = 125°C | I²t |
| 150 |
| kA²s |
I²t - value | VR = 0 V, tP = 10 ms, Tvj = 150°C | 145 | kA²s |
特征值 / Characteristic Values |
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| min. | typ. | max. |
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正向電壓 | IF = 900 A, VGE = 0 V | Tvj = 25°C |
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| 1,65 | 2,15 | V |
Forward voltage | IF = 900 A, VGE = 0 V | Tvj = 125°C | VF |
| 1,55 |
| V |
| IF = 900 A, VGE = 0 V | Tvj = 150°C |
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| 1,50 |
| V |
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反向恢復(fù)峰值電流 | IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C) | Tvj = 25°C |
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| 560 |
| A |
Peak reverse recovery current | VR = 600 V | Tvj = 125°C | IRM |
| 770 |
| A |
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| Tvj = 150°C |
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| 820 |
| A |
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恢復(fù)電荷 | IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C) | Tvj = 25°C |
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| 110 |
| µC |
Recovered charge | VR = 600 V | Tvj = 125°C | Qr |
| 200 |
| µC |
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| Tvj = 150°C |
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| 225 |
| µC |
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反向恢復(fù)損耗（每脈沖） | IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C) | Tvj = 25°C |
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| 50,0 |
| mJ |
Reverse recovery energy | VR = 600 V | Tvj = 125°C | Erec |
| 90,0 |
| mJ |
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| Tvj = 150°C |
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| 105 |
| mJ |
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結(jié)－外殼熱阻 | 每個二極管 / per diode |
| RthJC |
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| 37,0 | K/kW |
Thermal resistance, junction to case |
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外殼－散熱器熱阻 | 每個二極管 / per diode |
| RthCH |
| 20,0 |
| K/kW |
Thermal resistance, case to heatsink | lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K) |
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在開關(guān)狀態(tài)下溫度 |
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| Tvj op | -40 |
| 150 | °C |
Temperature under switching conditions |
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反向二極管 / Diode, Reverse
zui大額定值 / Maximum Rated Values
反向重復(fù)峰值電壓 | Tvj = 25°C | VRRM |
| 1200 |
| V |
Repetitive peak reverse voltage | ||||||
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連續(xù)正向直流電流 |
| IF |
| 120 |
| A |
Continuous DC forward current | ||||||
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正向重復(fù)峰值電流 | tP = 1 ms | IFRM |
| 240 |
| A |
Repetitive peak forward current | ||||||
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I2t-值 | VR = 0 V, tP = 10 ms, Tvj = 125°C | I²t |
| 0,17 | kA²s | |
I²t - value | ||||||
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特征值 / Characteristic Values |
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| min. | typ. | max. |
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正向電壓 | IF = 120 A, VGE = 0 V | Tvj = 25°C | VF |
| 1,65 | 2,15 | V |
Forward voltage | IF = 120 A, VGE = 0 V | Tvj = 125°C |
| 1,65 |
| V | |
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結(jié)－外殼熱阻 | 每個二極管 / per diode |
| RthJC |
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| 340 | K/kW |
Thermal resistance, junction to case |
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外殼－散熱器熱阻 | 每個二極管 / per diode |
| RthCH |
| 170 |
| K/kW |
Thermal resistance, case to heatsink | lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K) |
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在開關(guān)狀態(tài)下溫度 |
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| Tvj op | -40 |
| 150 | °C |
BSM300GA120DN2S FD200R12KE3 FF200R12KT3 FF600R12KF4
BSM300GA160N11S FD200R12PT4_B6 FF200R12KT3_E FF600R12KL4C
BSM300GA170DLC FD200R65KF2-K FF200R12KT4 FF600R12ME4
BSM300GA170DN2 FD250R65KE3-K FF200R12MT4 FF600R12ME4_B11
BSM300GA170DN2S FD300R06KE3 FF200R17KE3 FF600R16KF4
BSM300GAL120DLC FD300R07PE4_B6 FF200R17KE4 FF600R17KE3
BSM300GAR120DLC FD300R12KE3 FF200R33KF2C FF600R17KE3_B2
BSM300GB120DLC FD300R12KS4 FF225R12ME3 FF600R17KF6C_B2
BSM300GB60DLC FD300R12KS4_B5 FF225R12ME4 FF600R17ME4
BSM400GA120DLC FD400R12KE3 FF225R12MS4 FF650R17IE4
BSM400GA120DN2 FD400R12KE3_B5 FF225R17ME3 FF650R17IE4D_B2
BSM400GA120DN2S FD400R33KF2C FF225R17ME4 FF800R12KE3
BSM400GA170DLC FD400R33KF2C-K FF225R17ME4_B11
BSM50GAL120DN2 FF300R12KE3 FF300R06KE3 FF800R12KL4C
BSM600GA120DLC FF300R12KE4 FF300R06KE3_B2 FF800R17KE3
BSM75GB120DN11 FF800R17KP4_B2 FF300R07KE4 FF800R17KE3_B2
BYM300B170DN2 FF900R12IE4 FF300R07ME4_B11 FF800R17KF6C_B2
BYM600A170DN2
英飛凌(Infineon)晶閘管、可控硅、IGBT模塊，優(yōu)派克（eupec）可控硅、可控硅、IGBT模塊。
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