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深圳市邁瑞施電子技術(shù)有限公司
深圳市邁瑞施電子技術(shù)有限公司
| 參 考 價 | 面議 |
產(chǎn)品型號SKKT280/22EH4
品 牌
廠商性質(zhì)代理商
所 在 地深圳市
聯(lián)系方式：曾先生查看聯(lián)系方式
更新時間：2016-07-02 14:50:31瀏覽次數(shù)：202次
聯(lián)系我時，請告知來自 環(huán)保在線SKKT280/22EH4品牌：西門康又名賽米控Semikron；
產(chǎn)地：*；
PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發(fā)射極控制二極管
SKKT280/22EH4品牌：西門康又名賽米控Semikron；
SKKT280/22EH4產(chǎn)地：*；
PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發(fā)射極控制二極管
PrimePACK™2 module with Trench/Fieldstop IGBT3, enlarged Emitter Controlled 4 diode
初步數(shù)據(jù) / Preliminary Data
深圳市邁瑞施電子技術(shù)有限公司：一家專業(yè)做進口 * 現(xiàn)貨 批發(fā)零售的企業(yè)，
更詳細(xì)的內(nèi)容 敬請登錄公司了解。www.mrs2003。。ｃｏｍ
VCES = 1200V
IC nom = 323A / ICRM = 323A
典型應(yīng)用 Typical Applications
• 斬波應(yīng)用 • Chopper Applications
電氣特性 Electrical Features
• 提高工作結(jié)溫 Tvj op • Extended Operation Temperature Tvj op
• 高直流電壓穩(wěn)定性 • High DC Stability
• 高短路能力，自限制短路電流 • High Short Circuit Capability, Self Limiting Short
• VCEsat 帶正溫度系數(shù) Circuit Current
• VCEsat with positive Temperature Coefficient
• 低 VCEsat • Low VCEsat
機械特性 Mechanical Features
• 4 kV 交流 1分鐘 絕緣 • 4 kV AC 1min Insulation
• 封裝的 CTI > 400 • Package with CTI > 400
• 高爬電距離和電氣間隙 • High Creepage and Clearance Distances
• 高功率循環(huán)和溫度循環(huán)能力 • High Power and Thermal Cycling Capability
• 高功率密度 • High Power Density
• 低熱阻襯底 • Substrate for Low Thermal Resistance
SKD160/12 SKKD100/18 SKKH250/16E SKKT330/08E SKM300GB123D
SKD160/16 SKKD101/16 SKKH250/18E SKKT330/12E SKM300GB125D
SKD160/18 SKKD105F08 SKKH273/12E SKKT330/16E SKM300GB126D
SKD210/08 SKKD105F10 SKKH273/16E SKKT330/18E SKM300GB12E4
SKD210/12 SKKD105F12 SKKH280/20EH4 SKKT430/16E SKM300GB12T4
SKD210/16 SKKD115F12 SKKH280/22EH4 SKKT460/16E SKM300GB12V
SKD210/18 SKKD115F14 SKKH323/12E SKKT460/22EH4 SKM300GBD12T4
SKD31/02 SKKD150F12 SKKH323/16E SKKT570/12E SKM300GM12T4
SKD31/14 SKKD162/16 SKKH330/18E SKM100GAL12T4 SKM400GA12V
SKD31/16 SKKD162/18 SKKH460/16E SKM100GAR123D SKM400GA173D
SKD60/08 SKKD162/20H4 SKKH460/22EH4 SKM100GB063D SKM400GAL125D
SKD60/12 SKKD162/22H4 SKKH570/12E SKM100GB123D SKM400GAL126D
SKM600GA12V SKM75GB063D SKM400GB12V SKM145GAL176D SKM400GAR12T4
SKM600GA176D SKM75GB123D SKM400GB176D SKM145GAR123D SKM400GB066D
SKM600GAL126D SKM75GB12T4 SKM400GB176DL3 SKM145GB066D SKM400GB123D
SKM600GB066D SKM75GB12V SKM400GM12T4 SKM145GB123D SKM400GB125D
SKM600GB126D SKM75GB173D SKM40GAH123DTS95036 SKM145GB176D SKM400GB126D
SKM75GAL063D SKM75GB176D SKM40GD123D SKM150GAL123D SKM400GB12E4
IGBT, 斬波器 / IGBT-Chopper
zui大額定值 / Maximum Rated Values
集電極－發(fā)射極電壓 | Tvj = 25°C | VCES |
| 1200 |
| V |
Collector-emitter voltage | ||||||
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連續(xù)集電極直流電流 | TC = 100°C, Tvj max = 175°C | IC nom |
| 323 |
| A |
Continuous DC collector current | ||||||
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集電極重復(fù)峰值電流 | tP = 1 ms | ICRM |
| 1800 |
| A |
Repetitive peak collector current | ||||||
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總功率損耗 | TC = 25°C, Tvj max = 175°C | Ptot |
| 5,10 |
| kW |
Total power dissipation | ||||||
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柵極－發(fā)射極峰值電壓 |
| VGES |
| +/-20 |
| V |
Gate-emitter peak voltage | ||||||
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特征值 / Characteristic Values |
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| min. | typ. | max. |
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集電極－發(fā)射極飽和電壓 | IC = 900 A, VGE = 15 V |
| Tvj = 25°C |
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| 1,70 | 2,05 | V |
Collector-emitter saturation voltage | IC = 900 A, VGE = 15 V |
| Tvj = 125°C | VCE sat |
| 2,00 |
| V |
| IC = 900 A, VGE = 15 V |
| Tvj = 150°C |
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| 2,10 |
| V |
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柵極閾值電壓 | IC = 33,0 mA, VCE = VGE, Tvj = 25°C |
| VGEth | 5,0 | 5,8 | 6,5 | V | |
Gate threshold voltage |
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柵極電荷 | VGE = -15 V ... +15 V |
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| QG |
| 6,40 |
| µC |
Gate charge |
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內(nèi)部柵極電阻 | Tvj = 25°C |
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| RGint |
| 1,2 |
| W |
Internal gate resistor |
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輸入電容 | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V |
| Cies |
| 54,0 |
| nF | |
Input capacitance |
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反向傳輸電容 | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V |
| Cres |
| 2,80 |
| nF | |
Reverse transfer capacitance |
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開通延遲時間(電感負(fù)載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | td on |
| 0,20 |
| µs |
Turn-on delay time, inductive load | VGE = ±15 V |
| Tvj = 125°C | 0,22 | µs | |||
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| RGon = 1,6 W |
| Tvj = 150°C |
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| 0,22 |
| µs |
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上升時間(電感負(fù)載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | tr |
| 0,14 |
| µs |
Rise time, inductive load | VGE = ±15 V |
| Tvj = 125°C |
| 0,15 |
| µs | |
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| RGon = 1,6 W |
| Tvj = 150°C |
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| 0,15 |
| µs |
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關(guān)斷延遲時間(電感負(fù)載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | td off |
| 0,70 |
| µs |
Turn-off delay time, inductive load | VGE = ±15 V |
| Tvj = 125°C | 0,80 | µs | |||
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| RGoff = 1,6 W |
| Tvj = 150°C |
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| 0,85 |
| µs |
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下降時間(電感負(fù)載) | IC = 900 A, VCE = 600 V |
| Tvj = 25°C | tf |
| 0,20 |
| µs |
Fall time, inductive load | VGE = ±15 V |
| Tvj = 125°C |
| 0,40 |
| µs | |
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| RGoff = 1,6 W |
| Tvj = 150°C |
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| 0,45 |
| µs |
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開通損耗能量 (每脈沖) | IC = 900 A, VCE = 600 V, LS = 45 nH | Tvj = 25°C |
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| 50,0 |
| mJ | |
Turn-on energy loss per pulse | VGE = ±15 V, di/dt = 4800 A/µs (Tvj = 150°C) Tvj = 125°C | Eon | 70,0 | mJ | ||||
| RGon = 1,6 W |
| Tvj = 150°C |
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| 80,0 |
| mJ |
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關(guān)斷損耗能量 (每脈沖） | IC = 900 A, VCE = 600 V, LS = 45 nH | Tvj = 25°C |
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| 150 |
| mJ | |
Turn-off energy loss per pulse | VGE = ±15 V, du/dt = 2700 V/µs (Tvj = 150°C)Tvj = 125°C | Eoff | 200 | mJ | ||||
| RGoff = 1,6 W |
| Tvj = 150°C |
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| 205 |
| mJ |
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短路數(shù)據(jù) | VGE £ 15 V, VCC = 800 V |
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SC data | VCEmax = VCES -LsCE ·di/dt | tP £ 10 µs, Tvj = 150°C | 3600 | A | ||||
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結(jié)－外殼熱阻 | 每個 IGBT / per IGBT |
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| RthJC |
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| 29,5 | K/kW |
Thermal resistance, junction to case |
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外殼－散熱器熱阻 | 每個 IGBT / per IGBT |
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| RthCH |
| 16,0 |
| K/kW |
Thermal resistance, case to heatsink | lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K) |
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在開關(guān)狀態(tài)下溫度 |
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| Tvj op | -40 |
| 150 | °C |
Diode-斬波器 / Diode-Chopper
zui大額定值 / Maximum Rated Values
反向重復(fù)峰值電壓 | Tvj = 25°C | VRRM |
| 1200 |
| V |
Repetitive peak reverse voltage | ||||||
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連續(xù)正向直流電流 |
| IF |
| 900 |
| A |
Continuous DC forward current | ||||||
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正向重復(fù)峰值電流 | tP = 1 ms | IFRM |
| 1800 |
| A |
Repetitive peak forward current | ||||||
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I2t-值 | VR = 0 V, tP = 10 ms, Tvj = 125°C | I²t |
| 150 |
| kA²s |
I²t - value | VR = 0 V, tP = 10 ms, Tvj = 150°C | 145 | kA²s |
特征值 / Characteristic Values |
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| min. | typ. | max. |
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正向電壓 | IF = 900 A, VGE = 0 V | Tvj = 25°C |
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| 1,65 | 2,15 | V |
Forward voltage | IF = 900 A, VGE = 0 V | Tvj = 125°C | VF |
| 1,55 |
| V |
| IF = 900 A, VGE = 0 V | Tvj = 150°C |
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| 1,50 |
| V |
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反向恢復(fù)峰值電流 | IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C) | Tvj = 25°C |
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| 560 |
| A |
Peak reverse recovery current | VR = 600 V | Tvj = 125°C | IRM |
| 770 |
| A |
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| Tvj = 150°C |
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| 820 |
| A |
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恢復(fù)電荷 | IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C) | Tvj = 25°C |
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| 110 |
| µC |
Recovered charge | VR = 600 V | Tvj = 125°C | Qr |
| 200 |
| µC |
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| Tvj = 150°C |
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| 225 |
| µC |
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反向恢復(fù)損耗（每脈沖） | IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C) | Tvj = 25°C |
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| 50,0 |
| mJ |
Reverse recovery energy | VR = 600 V | Tvj = 125°C | Erec |
| 90,0 |
| mJ |
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| Tvj = 150°C |
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| 105 |
| mJ |
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結(jié)－外殼熱阻 | 每個二極管 / per diode |
| RthJC |
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| 37,0 | K/kW |
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反向二極管 / Diode, Reverse
zui大額定值 / Maximum Rated Values
反向重復(fù)峰值電壓 | Tvj = 25°C | VRRM |
| 1200 |
| V |
Repetitive peak reverse voltage | ||||||
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連續(xù)正向直流電流 |
| IF |
| 120 |
| A |
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正向重復(fù)峰值電流 | tP = 1 ms | IFRM |
| 240 |
| A |
Repetitive peak forward current | ||||||
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I2t-值 | VR = 0 V, tP = 10 ms, Tvj = 125°C | I²t |
| 0,17 | kA²s | |
I²t - value | ||||||
賽米控可控硅、晶閘管、IGBT模塊，西門康可控硅、晶閘管、IGBT模塊。
中文資料，技術(shù)參數(shù)， PDF datasheet,圖片。
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