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產品型號FZ900R12KE4

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所在地深圳市

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更新時間：2016-07-02 15:32:50瀏覽次數：145次

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深圳市邁瑞施電子技術有限公司

經營模式：代理商

商鋪產品：987條

所在地區(qū)：廣東深圳市

聯系人：曾先生（銷售技術經理）

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產品簡介

FZ900R12KE4品牌：英飛凌（Infineon）、優(yōu)派克（eupec）；
產地：源產于*；
技術信息 / Technical Information
IGBT-模塊
IGBT-modules
PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發(fā)射極控制二極管

詳細介紹

FZ900R12KE4品牌：英飛凌(Infineon)、優(yōu)派克（eupec）；

FZ900R12KE4產地：源產于*；

技術信息 / Technical Information

IGBT-模塊

IGBT-modules

PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發(fā)射極控制二極管

PrimePACK™2 module with Trench/Fieldstop IGBT3, enlarged Emitter Controlled 4 diode

初步數據 / Preliminary Data

深圳市邁瑞施電子技術有限公司：一家專業(yè)做進口 * 現貨批發(fā)零售的企業(yè)，

更詳細的內容敬請登錄公司了解。www.mrs2003。。ｃｏｍ

VCES = 1200V

IC nom = 900A / ICRM = 900A

典型應用 Typical Applications

• 斬波應用 • Chopper Applications

電氣特性 Electrical Features

• 提高工作結溫 Tvj op • Extended Operation Temperature Tvj op

• 高直流電壓穩(wěn)定性 • High DC Stability

• 高短路能力，自限制短路電流 • High Short Circuit Capability, Self Limiting Short

• VCEsat 帶正溫度系數 Circuit Current

• VCEsat with positive Temperature Coefficient

• 低 VCEsat • Low VCEsat

機械特性 Mechanical Features

• 4 kV 交流 1分鐘絕緣 • 4 kV AC 1min Insulation

• 封裝的 CTI > 400 • Package with CTI > 400

• 高爬電距離和電氣間隙 • High Creepage and Clearance Distances

• 高功率循環(huán)和溫度循環(huán)能力 • High Power and Thermal Cycling Capability

• 高功率密度 • High Power Density

• 低熱阻襯底 • Substrate for Low Thermal Resistance

IGBT, 斬波器 / IGBT-Chopper

zui大額定值 / Maximum Rated Values

集電極－發(fā)射極電壓	Tvj = 25°C	VCES	1200	V
Collector-emitter voltage


連續(xù)集電極直流電流	TC = 100°C, Tvj max = 175°C	IC nom	900	A
Continuous DC collector current


集電極重復峰值電流	tP = 1 ms	ICRM	1800	A
Repetitive peak collector current


總功率損耗	TC = 25°C, Tvj max = 175°C	Ptot	5,10	kW
Total power dissipation


柵極－發(fā)射極峰值電壓		VGES	+/-20	V
Gate-emitter peak voltage

特征值 / Characteristic Values					min.	typ.	max.
集電極－發(fā)射極飽和電壓	IC = 900 A, VGE = 15 V		Tvj = 25°C			1,70	2,05	V
Collector-emitter saturation voltage	IC = 900 A, VGE = 15 V		Tvj = 125°C	VCE sat		2,00		V
	IC = 900 A, VGE = 15 V		Tvj = 150°C			2,10		V

柵極閾值電壓	IC = 33,0 mA, VCE = VGE, Tvj = 25°C			VGEth	5,0	5,8	6,5	V
Gate threshold voltage	IC = 33,0 mA, VCE = VGE, Tvj = 25°C			VGEth	5,0	5,8	6,5	V
Gate threshold voltage

柵極電荷	VGE = -15 V ... +15 V			QG		6,40		µC
Gate charge	VGE = -15 V ... +15 V			QG		6,40		µC
Gate charge

內部柵極電阻	Tvj = 25°C			RGint		1,2		W
Internal gate resistor	Tvj = 25°C			RGint		1,2		W
Internal gate resistor

輸入電容	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cies		54,0		nF
Input capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cies		54,0		nF
Input capacitance

反向傳輸電容	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cres		2,80		nF
Reverse transfer capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cres		2,80		nF
Reverse transfer capacitance

集電極-發(fā)射極截止電流	VCE = 1200 V, VGE = 0 V, Tvj = 25°C			ICES			5,0	mA
Collector-emitter cut-off current	VCE = 1200 V, VGE = 0 V, Tvj = 25°C			ICES			5,0	mA
Collector-emitter cut-off current

柵極-發(fā)射極漏電流	VCE = 0 V, VGE = 20 V, Tvj = 25°C			IGES			400	nA
Gate-emitter leakage current	VCE = 0 V, VGE = 20 V, Tvj = 25°C			IGES			400	nA
Gate-emitter leakage current

開通延遲時間(電感負載)	IC = 900 A, VCE = 600 V		Tvj = 25°C	td on		0,20		µs
Turn-on delay time, inductive load	VGE = ±15 V		Tvj = 125°C			0,22		µs

	RGon = 1,6 W		Tvj = 150°C			0,22		µs

上升時間(電感負載)	IC = 900 A, VCE = 600 V		Tvj = 25°C	tr		0,14		µs
Rise time, inductive load	VGE = ±15 V		Tvj = 125°C	tr		0,15		µs
Rise time, inductive load	VGE = ±15 V		Tvj = 125°C			0,15		µs
	RGon = 1,6 W		Tvj = 150°C			0,15		µs

關斷延遲時間(電感負載)	IC = 900 A, VCE = 600 V		Tvj = 25°C	td off		0,70		µs
Turn-off delay time, inductive load	VGE = ±15 V		Tvj = 125°C			0,80		µs

	RGoff = 1,6 W		Tvj = 150°C			0,85		µs

下降時間(電感負載)	IC = 900 A, VCE = 600 V		Tvj = 25°C	tf		0,20		µs
Fall time, inductive load	VGE = ±15 V		Tvj = 125°C	tf		0,40		µs
Fall time, inductive load	VGE = ±15 V		Tvj = 125°C			0,40		µs
	RGoff = 1,6 W		Tvj = 150°C			0,45		µs

開通損耗能量 (每脈沖)	IC = 900 A, VCE = 600 V, LS = 45 nH		Tvj = 25°C			50,0		mJ
Turn-on energy loss per pulse	VGE = ±15 V, di/dt = 4800 A/µs (Tvj = 150°C) Tvj = 125°C			Eon		70,0		mJ
	RGon = 1,6 W		Tvj = 150°C			80,0		mJ

關斷損耗能量 (每脈沖）	IC = 900 A, VCE = 600 V, LS = 45 nH		Tvj = 25°C			150		mJ
Turn-off energy loss per pulse	VGE = ±15 V, du/dt = 2700 V/µs (Tvj = 150°C)Tvj = 125°C			Eoff		200		mJ
	RGoff = 1,6 W		Tvj = 150°C			205		mJ

短路數據	VGE £ 15 V, VCC = 800 V			ISC
SC data	VCEmax = VCES -LsCE ·di/dt	tP £ 10 µs, Tvj = 150°C		ISC		3600		A
SC data	VCEmax = VCES -LsCE ·di/dt	tP £ 10 µs, Tvj = 150°C				3600		A
結－外殼熱阻	每個 IGBT / per IGBT			RthJC			29,5	K/kW
Thermal resistance, junction to case	每個 IGBT / per IGBT			RthJC			29,5	K/kW
Thermal resistance, junction to case

外殼－散熱器熱阻	每個 IGBT / per IGBT			RthCH		16,0		K/kW
Thermal resistance, case to heatsink	lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K)			RthCH		16,0		K/kW
Thermal resistance, case to heatsink	lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K)

在開關狀態(tài)下溫度				Tvj op	-40		150	°C

Diode-斬波器 / Diode-Chopper

zui大額定值 / Maximum Rated Values

反向重復峰值電壓	Tvj = 25°C	VRRM	1200	V
Repetitive peak reverse voltage


連續(xù)正向直流電流		IF	900	A
Continuous DC forward current


正向重復峰值電流	tP = 1 ms	IFRM	1800	A
Repetitive peak forward current


I2t-值	VR = 0 V, tP = 10 ms, Tvj = 125°C	I²t	150	kA²s
I²t - value	VR = 0 V, tP = 10 ms, Tvj = 150°C		145	kA²s

特征值 / Characteristic Values				min.	typ.	max.
正向電壓	IF = 900 A, VGE = 0 V	Tvj = 25°C			1,65	2,15	V
Forward voltage	IF = 900 A, VGE = 0 V	Tvj = 125°C	VF		1,55		V
	IF = 900 A, VGE = 0 V	Tvj = 150°C			1,50		V

反向恢復峰值電流	IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C)	Tvj = 25°C			560		A
Peak reverse recovery current	VR = 600 V	Tvj = 125°C	IRM		770		A
		Tvj = 150°C			820		A

恢復電荷	IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C)	Tvj = 25°C			110		µC
Recovered charge	VR = 600 V	Tvj = 125°C	Qr		200		µC
		Tvj = 150°C			225		µC

反向恢復損耗（每脈沖）	IF = 900 A, - diF/dt = 4800 A/µs (Tvj=150°C)	Tvj = 25°C			50,0		mJ
Reverse recovery energy	VR = 600 V	Tvj = 125°C	Erec		90,0		mJ
		Tvj = 150°C			105		mJ

結－外殼熱阻	每個二極管 / per diode		RthJC			37,0	K/kW
Thermal resistance, junction to case	每個二極管 / per diode		RthJC			37,0	K/kW
Thermal resistance, junction to case

外殼－散熱器熱阻	每個二極管 / per diode		RthCH		20,0		K/kW
Thermal resistance, case to heatsink	lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K)		RthCH		20,0		K/kW
Thermal resistance, case to heatsink	lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K)

在開關狀態(tài)下溫度			Tvj op	-40		150	°C
Temperature under switching conditions			Tvj op	-40		150	°C
Temperature under switching conditions

反向二極管 / Diode, Reverse

zui大額定值 / Maximum Rated Values

反向重復峰值電壓	Tvj = 25°C	VRRM	1200		V
Repetitive peak reverse voltage


連續(xù)正向直流電流		IF	120		A
Continuous DC forward current


正向重復峰值電流	tP = 1 ms	IFRM	240		A
Repetitive peak forward current


I2t-值	VR = 0 V, tP = 10 ms, Tvj = 125°C	I²t	0,17	kA²s
I²t - value

特征值 / Characteristic Values				min.	typ.	max.
正向電壓	IF = 120 A, VGE = 0 V	Tvj = 25°C	VF		1,65	2,15	V
Forward voltage	IF = 120 A, VGE = 0 V	Tvj = 125°C	VF		1,65		V
Forward voltage	IF = 120 A, VGE = 0 V	Tvj = 125°C			1,65		V
結－外殼熱阻	每個二極管 / per diode		RthJC			340	K/kW
Thermal resistance, junction to case	每個二極管 / per diode		RthJC			340	K/kW
Thermal resistance, junction to case

外殼－散熱器熱阻	每個二極管 / per diode		RthCH		170		K/kW
Thermal resistance, case to heatsink	lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K)		RthCH		170		K/kW
Thermal resistance, case to heatsink	lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K)

在開關狀態(tài)下溫度			Tvj op	-40		150	°C