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SKKT172/16E

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產(chǎn)品型號SKKT172/16E

品牌

廠商性質(zhì)代理商

所在地深圳市

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聯(lián)系方式：曾先生查看聯(lián)系方式

更新時間：2016-07-04 18:11:36瀏覽次數(shù)：472次

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深圳市邁瑞施電子技術(shù)有限公司

經(jīng)營模式：代理商

商鋪產(chǎn)品：987條

所在地區(qū)：廣東深圳市

聯(lián)系人：曾先生（銷售技術(shù)經(jīng)理）

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產(chǎn)品簡介

SKKT172/16E品牌：西門康又名賽米控Semikron；
產(chǎn)地：*；
PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發(fā)射極控制二極管

詳細(xì)介紹

SKKT172/16E品牌：西門康又名賽米控Semikron；

SKKT172/16E產(chǎn)地：*；

PrimePACK™2 模塊采用第三代溝槽柵/場終止IGBT3和增大的第三代發(fā)射極控制二極管

PrimePACK™2 module with Trench/Fieldstop IGBT3, enlarged Emitter Controlled 4 diode

初步數(shù)據(jù) / Preliminary Data

深圳市邁瑞施電子技術(shù)有限公司：一家專業(yè)做進(jìn)口 * 現(xiàn)貨批發(fā)零售的企業(yè)，

更詳細(xì)的內(nèi)容敬請登錄公司了解。www.mrs2003。。ｃｏｍ

典型應(yīng)用 Typical Applications

• 斬波應(yīng)用 • Chopper Applications

電氣特性 Electrical Features

• 提高工作結(jié)溫 Tvj op • Extended Operation Temperature Tvj op

• 高直流電壓穩(wěn)定性 • High DC Stability

• 高短路能力，自限制短路電流 • High Short Circuit Capability, Self Limiting Short

• VCEsat 帶正溫度系數(shù) Circuit Current

• VCEsat with positive Temperature Coefficient

• 低 VCEsat • Low VCEsat

機(jī)械特性 Mechanical Features

• 4 kV 交流 1分鐘絕緣 • 4 kV AC 1min Insulation

• 封裝的 CTI > 400 • Package with CTI > 400

• 高爬電距離和電氣間隙 • High Creepage and Clearance Distances

• 高功率循環(huán)和溫度循環(huán)能力 • High Power and Thermal Cycling Capability

• 高功率密度 • High Power Density

• 低熱阻襯底 • Substrate for Low Thermal Resistance

SEMiX603GAL066HDS SKD62/14 SKKD380/08 SKKH570/18E SKM150GAL12V

SEMiX603GB066HDS SKD62/18 SKKD380/16 SKKQ1200/18E SKM150GAR12T4

SEMiX604GAL12E4S SKD82/04 SKKD380/18 SKKQ1500/14E SKM150GB123D

SEMiX604GAR12E4S SKD82/08 SKKD380/20H4 SKKQ1500/18E SKM150GB12T4

SEMiX604GB126HDS SKD82/12 SKKD380/22H4 SKKQ3000/14E SKM150GB12T4G

SEMiX604GB176HDS SKD82/18 SKKD701/18 SKKQ560/18E SKM150GB173D

SEMiX653GAL176HDS SKDH100/08 SKKD701/22H4 SKKQ800/14E SKM150GM12T4G

SEMiX653GAR176HDS SKDH100/12 SKKD75F12 SKKQ800/18E SKM180A020

SEMiX653GB176HDS SKDH100/14 SKKE1200/18H4 SKKT106/08E SKM195GAL123D

SEMiX653GD176HDc SKDH115/12 SKKE1200/22H4 SKKT106/12E SKM195GAL126D

SEMiX703GAL126HDS SKDH115/16 SKKE120F17 SKKT106/14E SKM195GB066D

SEMiX703GAR126HDS SKDH116/16-L75 SKKE162/08 SKKT106/16E SKM195GB126D

SEMiX703GB126HDS SKDT100/08 SKKE162/12 SKKT106/18E SKM200GAL123D

SEMiX703GD126HDc SKDT100/12 SKKE162/14 SKKT106B12E SKM200GAL125D

SEMiX854GB176HDS SKDT100/14 SKKE162/16 SKKT106B16E SKM200GAL126D

SEMiX904GB126HDS SKDT100/16 SKKE162/18 SKKT106B18E SKM200GAL12E4

SK100B16 SKDT115/12 SKKE162/22H4TS SKKT107/16E SKM200GAL12T4

SK100GB12T4T SKDT145/12 SKKE301F12 SKKT122/12E SKM200GAL173D

SK100GD066T SKDT60/04 SKKE310F12 SKKT122/16E SKM200GAL176D

SK100GD126T SKDT60/08 SKKE330F17 SKKT122/18E SKM200GAR123D

SK100GD12T4T SKDT60/12 SKKE380/12 SKKT132/08E SKM200GAR125D

SK100GH12T4T SKDT60/14 SKKE380/16 SKKT132/12E SKM200GAR173D

SK100KQ12 SKET330/12E SKKE600/12 SKKT132/14E SKM200GB063D

SK100KQ16 SKET330/16E SKKE600/16 SKKT132/16E SKM200GB123D

SK120KQ12 SKET740/18GH4 SKKH107/16E SKKT162/18E SKM200GB173D1

SK200DHL066 SKET800/14GH4 SKKH132/08E SKKT162/22EH4 SKM200GBD123D

SK300MB075 SKET800/18GH4 SKKH132/12E SKKT172/14E SKM200GBD126D

SK30DGDL066ET SKiM220GD176DH4 SKKH132/16E SKM200GM12T4

SKD100/04 SKiM270GD176D SKKH132/18E SKKT172/18E SKM300GA123D

SKD100/08 SKiM300GD126D SKKH132/22EH4 SKKT250/08E SKM300GA12E4

SKD100/12 SKiM300GD126DL SKKH162/08E SKKT250/12E SKM300GA12T4

SKD100/16 SKiM400GD126DM SKKH162/12E SKKT250/16E SKM300GA12V

SKD110/08 SKiM450GD126D SKKH162/14E SKKT250/18E SKM300GAL063D

SKD110/16 SKiM601GD126DLM SKKH162/18E SKKT273/16E SKM300GAL12E4

SKD110/18 SKiM601GD126DM SKKH162/20EH4 SKKT273/18E SKM300GAL12T4

SKD115/12 SKKD100/08 SKKH162/22EH4 SKKT280/20EH4 SKM300GAR063D

SKD115/16 SKKD100/12 SKKH172/16E SKKT280/22EH4 SKM300GAR123D

SKD145/16 SKKD100/14 SKKH250/08E SKKT323/12E SKM300GB063D

SKD160/12 SKKD100/18 SKKH250/16E SKKT330/08E SKM300GB123D

SKD160/16 SKKD101/16 SKKH250/18E SKKT330/12E SKM300GB125D

SKD210/12 SKKD105F12 SKKH280/20EH4 SKKT430/16E SKM300GB12T4

SKD210/16 SKKD115F12 SKKH280/22EH4 SKKT460/16E SKM300GB12V

SKD210/18 SKKD115F14 SKKH323/12E SKKT460/22EH4 SKM300GBD12T4

SKD31/02 SKKD150F12 SKKH323/16E SKKT570/12E SKM300GM12T4

SKD31/04 SKKD162/08 SKKH330/08E SKKT570/16E SKM400GA123D

SKD31/12 SKKD162/14 SKKH330/16E SKM100GAL123D SKM400GA12T4

SKD31/14 SKKD162/16 SKKH330/18E SKM100GAL12T4 SKM400GA12V

SKD31/16 SKKD162/18 SKKH460/16E SKM100GAR123D SKM400GA173D

SKD60/08 SKKD162/20H4 SKKH460/22EH4 SKM100GB063D SKM400GAL125D

SKD60/12 SKKD162/22H4 SKKH570/12E SKM100GB123D SKM400GAL126D

SKD60/16 SKKD170F12 SKM500GA123D SKM100GB125DNN SKM400GAL12E4

SKD62/04 SKKD205F06 SKM500GA123DS SKM100GB12T4 SKM400GAL12T4

SKD62/08 SKKD212/12 SKM50GAL123D SKM100GB12T4G SKM400GAL12V

SKM600GA125D SKKD212/16 SKM50GAL12T4 SKM100GB12V SKM400GAL176D04119

SKM600GA126D03141 SKKD260/08 SKM50GB063D SKM100GB173D SKM400GAL176DL3

SKM600GA12E4 SKKD260/12 SKM50GB123D SKM100GB176D SKM400GAR125D

SKM600GA12T4 SKKD260/16 SKM50GB12T4 SKM145GAL123D SKM400GAR12E4

SKM600GA12V SKM75GB063D SKM400GB12V SKM145GAL176D SKM400GAR12T4

SKM600GA176D SKM75GB123D SKM400GB176D SKM145GAR123D SKM400GB066D

SKM600GAL126D SKM75GB12T4 SKM400GB176DL3 SKM145GB066D SKM400GB123D

SKM600GB066D SKM75GB12V SKM400GM12T4 SKM145GB123D SKM400GB125D

SKM600GB126D SKM75GB173D SKM40GAH123DTS95036 SKM145GB176D SKM400GB126D

SKM75GAL063D SKM75GB176D SKM40GD123D SKM150GAL123D SKM400GB12E4

SKM75GAL123D SKM75GD123D SKM40GD124DTS97066 SKM400GB12T4

SKM75GAR063D SKM75GDL123D SKM800GA125D03071 SKM800GA176D

SKM75GAR123D SKM800GA126D

IGBT, 斬波器 / IGBT-Chopper

zui大額定值 / Maximum Rated Values

集電極－發(fā)射極電壓	Tvj = 25°C	VCES	1200	V
Collector-emitter voltage


連續(xù)集電極直流電流	TC = 100°C, Tvj max = 175°C	IC nom	800	A
Continuous DC collector current


集電極重復(fù)峰值電流	tP = 1 ms	ICRM	1800	A
Repetitive peak collector current


總功率損耗	TC = 25°C, Tvj max = 175°C	Ptot	5,10	kW
Total power dissipation


柵極－發(fā)射極峰值電壓		VGES	+/-20	V
Gate-emitter peak voltage

特征值 / Characteristic Values					min.	typ.	max.
集電極－發(fā)射極飽和電壓	IC = 900 A, VGE = 15 V		Tvj = 25°C			1,70	2,05	V
Collector-emitter saturation voltage	IC = 900 A, VGE = 15 V		Tvj = 125°C	VCE sat		2,00		V
	IC = 900 A, VGE = 15 V		Tvj = 150°C			2,10		V



輸入電容	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cies		54,0		nF
Input capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cies		54,0		nF
Input capacitance

反向傳輸電容	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cres		2,80		nF
Reverse transfer capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V			Cres		2,80		nF
Reverse transfer capacitance

集電極-發(fā)射極截止電流	VCE = 1200 V, VGE = 0 V, Tvj = 25°C			ICES			5,0	mA
Collector-emitter cut-off current	VCE = 1200 V, VGE = 0 V, Tvj = 25°C			ICES			5,0	mA
Collector-emitter cut-off current

柵極-發(fā)射極漏電流	VCE = 0 V, VGE = 20 V, Tvj = 25°C			IGES			400	nA
Gate-emitter leakage current	VCE = 0 V, VGE = 20 V, Tvj = 25°C			IGES			400	nA
Gate-emitter leakage current

開通延遲時間(電感負(fù)載)	IC = 900 A, VCE = 600 V		Tvj = 25°C	td on		0,20		µs
Turn-on delay time, inductive load	VGE = ±15 V		Tvj = 125°C			0,22		µs

	RGon = 1,6 W		Tvj = 150°C			0,22		µs

上升時間(電感負(fù)載)	IC = 900 A, VCE = 600 V		Tvj = 25°C	tr		0,14		µs
Rise time, inductive load	VGE = ±15 V		Tvj = 125°C	tr		0,15		µs
Rise time, inductive load	VGE = ±15 V		Tvj = 125°C			0,15		µs
	RGon = 1,6 W		Tvj = 150°C			0,15		µs

關(guān)斷延遲時間(電感負(fù)載)	IC = 900 A, VCE = 600 V		Tvj = 25°C	td off		0,70		µs
Turn-off delay time, inductive load	VGE = ±15 V		Tvj = 125°C			0,80		µs

	RGoff = 1,6 W		Tvj = 150°C			0,85		µs

下降時間(電感負(fù)載)	IC = 900 A, VCE = 600 V		Tvj = 25°C	tf		0,20		µs
Fall time, inductive load	VGE = ±15 V		Tvj = 125°C	tf		0,40		µs
Fall time, inductive load	VGE = ±15 V		Tvj = 125°C			0,40		µs
	RGoff = 1,6 W		Tvj = 150°C			0,45		µs

開通損耗能量 (每脈沖)	IC = 900 A, VCE = 600 V, LS = 45 nH		Tvj = 25°C			50,0		mJ
Turn-on energy loss per pulse	VGE = ±15 V, di/dt = 4800 A/µs (Tvj = 150°C) Tvj = 125°C			Eon		70,0		mJ
	RGon = 1,6 W		Tvj = 150°C			80,0		mJ

關(guān)斷損耗能量 (每脈沖）	IC = 900 A, VCE = 600 V, LS = 45 nH		Tvj = 25°C			150		mJ
Turn-off energy loss per pulse	VGE = ±15 V, du/dt = 2700 V/µs (Tvj = 150°C)Tvj = 125°C			Eoff		200		mJ
	RGoff = 1,6 W		Tvj = 150°C			205		mJ

短路數(shù)據(jù)	VGE £ 15 V, VCC = 800 V			ISC
SC data	VCEmax = VCES -LsCE ·di/dt	tP £ 10 µs, Tvj = 150°C		ISC		3600		A
SC data	VCEmax = VCES -LsCE ·di/dt	tP £ 10 µs, Tvj = 150°C				3600		A
結(jié)－外殼熱阻	每個 IGBT / per IGBT			RthJC			29,5	K/kW
Thermal resistance, junction to case	每個 IGBT / per IGBT			RthJC			29,5	K/kW
Thermal resistance, junction to case

外殼－散熱器熱阻	每個 IGBT / per IGBT			RthCH		16,0		K/kW
Thermal resistance, case to heatsink	lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K)			RthCH		16,0		K/kW
Thermal resistance, case to heatsink	lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K)

在開關(guān)狀態(tài)下溫度				Tvj op	-40		150	°C

Diode-斬波器 / Diode-Chopper

zui大額定值 / Maximum Rated Values

反向重復(fù)峰值電壓

Tvj = 25°C

VRRM

1200

Repetitive peak reverse voltage

連續(xù)正向直流電流

900

Continuous DC forward current

正向重復(fù)峰值電流

tP = 1 ms

IFRM

1800

I2t-值

VR = 0 V, tP = 10 ms, Tvj = 125°C

I²t

150

kA²s

I²t - value

VR = 0 V, tP = 10 ms, Tvj = 150°C

145

kA²s

特征值 / Characteristic Values

min.

typ.

max.

正向電壓

IF = 900 A, VGE = 0 V

Tvj = 25°C

1,65

2,15

Forward voltage

IF = 900 A, VGE = 0 V

Tvj = 125°C

1,55

IF = 900 A, VGE = 0 V

Tvj = 150°C

1,50

結(jié)－外殼熱阻

每個二極管 / per diode

RthJC

37,0

K/kW

Thermal resistance, junction to case

外殼－散熱器熱阻

每個二極管 / per diode

RthCH

20,0

K/kW

Thermal resistance, case to heatsink

lPaste = 1 W/(m·K) / lgrease = 1 W/(m·K)

在開關(guān)狀態(tài)下溫度

Tvj op

-40

150

°C

Temperature under switching conditions

反向二極管 / Diode, Reverse

zui大額定值 / Maximum Rated Values

反向重復(fù)峰值電壓	Tvj = 25°C	VRRM	1200		V
Repetitive peak reverse voltage


連續(xù)正向直流電流		IF	120		A
Continuous DC forward current


正向重復(fù)峰值電流	tP = 1 ms	IFRM	240		A
Repetitive peak forward current


I2t-值	VR = 0 V, tP = 10 ms, Tvj = 125°C	I²t	0,17	kA²s
I²t - value